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1

Failure Modes and Mechanisms of DC-Aged GaN LEDs

G. Meneghesso, S. Levada, E. Zanoni, S. Podda, G. Mura, M. Vanzi, A. Cavallini, A. Castaldini, S. Du, I. Eliashevich

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 268 KB

english, 2002

2

Reliability of visible GaN LEDs in plastic package

G. Meneghesso, S. Levada, E. Zanoni, G. Scamarcio, G. Mura, S. Podda, M. Vanzi, S. Du, I. Eliashevich

Journal:

Microelectronics Reliability

Year:

2003

File:

PDF, 1.22 MB

2003

3

InGaP/InGaAsP/GaAs 0.808 /spl mu/m separate confinement laser diodes grown by metalorganic chemical vapor deposition

Diaz, J., Eliashevich, I., Mobarhan, K., Kolev, E., Wang, L.J., Garbuzov, D.Z., Razeghi, M.

Journal:

IEEE Photonics Technology Letters

Year:

1994

Language:

english

File:

PDF, 260 KB

english, 1994

4

[IEEE 2006 IEEE Compound Semiconductor Integrated Circuit Symposium - San Antonio, TX, USA (2006.11.12-2006.11.15)] 2006 IEEE Compound Semiconductor Integrated Circuit Symposium - AlGaN/GaN HEMT on Diamond Technology Demonstration

Jessen, G., Gillespie, J., Via, G., Crespo, A., Langley, D., Wasserbauer, J., Faili, F., Francis, D., Babic, D., Ejeckam, F., Guo, S., Eliashevich, I.

Year:

2006

Language:

english

File:

PDF, 3.85 MB

english, 2006

5

[IEEE IEEE 14th International Semiconductor Laser Conference - Maui, HI, USA (19-23 Sept. 1994)] Proceedings of IEEE 14th International Semiconductor Laser Conference - Peculiarities of operation characteristics of high-power InGaAsP/GaAs 0.8 μm laser diodes

Razeghi, M., Diaz, J., Eliashevich, I., He, X., Yi, H., Erdtman, M., Kolev, E., Wang, L., Garbuzov, D.

Year:

1994

Language:

english

File:

PDF, 134 KB

english, 1994

6

SPIE Proceedings [SPIE Optoelectronics and High-Power Lasers & Applications - San Jose, CA (Saturday 24 January 1998)] Light-Emitting Diodes: Research, Manufacturing, and Applications II - Fabrication and characterization of GaN-based blue light-emitting diodes

Li, Yuxin, Brown, Michael G., Eliashevich, Ivan, DiCarlo, T., Tran, Chuong A., Karlicek, Jr., Robert F., Stall, Richard A., Koszi, L. A., Lu, Yu C., Shen, Hongen, Schubert, E. F.

Year:

1998

Language:

english

File:

PDF, 644 KB

english, 1998

7

Photon Recycling White Light Emitting Diode Based on InGaN Multiple Quantum Well Heterostructure

V.V. Nikolaev, M.E. Portnoi, I. Eliashevich

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 77 KB

english, 2001

8

High power aluminium-free InGaAsP/GaAs pumping diode lasers

M. Razeghi, I. Eliashevich, J. Diaz, H.-J. Yi, S. Kim, M. Erdtmann, D. Wu, L.J. Wang

Journal:

Materials Science and Engineering: B

Year:

1995

Language:

english

File:

PDF, 725 KB

english, 1995

9

Phase separation in InGaN/GaN multiple quantum wells and its relation to brightness of blue and green LEDs

C.A Tran, R.F Karlicek Jr., M Schurman, A Osinsky, V Merai, Y Li, I Eliashevich, M.G Brown, J Nering, I Ferguson, R Stall

Journal:

Journal of Crystal Growth

Year:

1998

Language:

english

File:

PDF, 106 KB

english, 1998

10

Fluorescence of Mercury Vapour in the Far Ultra-Violet.

ELIASHEVICH, M., TERENIN, A.

Journal:

Year:

1930

File:

PDF, 133 KB

1930

11

[IEEE 2007 65th Annual Device Research Conference - South Bend, IN, USA (2007.06.18-2007.06.20)] 2007 65th Annual Device Research Conference - Progress in GaN Performances and Reliability

Saunier, P., Lee, C., Balistreri, A., Dumka, D., Jimenez, J., Tserng, H. Q., Kao, M.Y., Chao, P.C., Chu, K., Souzis, A., Eliashevich, I., Guo, S., del Alamo, J., Joh, J., Shur, M.

Year:

2007

Language:

english

File:

PDF, 382 KB

english, 2007

12

[IEEE IEEE International Electron Devices Meeting - San Francisco, CA, USA (8-11 Dec. 2002)] Digest. International Electron Devices Meeting, - Degradation mechanisms of GaN-based LEDs after accelerated DC current aging

Meneghesso, G., Levada, S., Pierobon, R., Rampazzo, F., Zanoni, E., Cavallini, A., Castaldini, A., Scamarcio, G., Du, S., Eliashevich, I.

Year:

2002

Language:

english

File:

PDF, 239 KB

english, 2002

13

[IEEE LEOS'94 - Boston, MA, USA (31 Oct.-3 Nov. 1994)] Proceedings of LEOS'94 - Theoretical investigation of J/sub th/ and η/sub d/ vs. cavity length for InGaAsP/GaAs high power lasers

Yi, H.J., Eliashevich, I., Diaz, J., Wang, L.J., Razeghi, M.

Year:

1994

Language:

english

File:

PDF, 177 KB

english, 1994

14

[IEEE 2004 IEEE International Reliability Physics Symposium. - Phoenix, AZ, USA (25-29 April 2004)] 2004 IEEE International Reliability Physics Symposium. Proceedings - Failure mechanisms of GaN-based LEDs related with instabilities in doping profile and deep levels

Meneghesso, G., Levada, S., Zanoni, E., Salviati, G., Armani, N., Rossi, F., Pavesi, M., Manfredi, M., Cavallini, A., Castaldini, A., Du, S., Eliashevich, I.

Year:

2004

Language:

english

File:

PDF, 349 KB

english, 2004

15

[IEEE LEOS'94 - Boston, MA, USA (31 Oct.-3 Nov. 1994)] Proceedings of LEOS'94 - Optimization of InGaAsP/GaAs laser diode processing for high-power operation

Diaz, J., Eliashevich, I., Yi, H., Wang, L., Razeghi, M.

Year:

1994

Language:

english

File:

PDF, 158 KB

english, 1994

16

Theoretical investigation of minority carrier leakages of high-power 0.8 μm InGaAsP/InGaP/GaAs laser diodes

Diaz, J., Eliashevich, I., Yi, H., He, X., Stanton, M., Erdtmann, M., Wang, L., Razeghi, M.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 340 KB

english, 1994

17

Quantitative Study of the Quenching of Fluorescence and of the Transfer of Energy in Iodine Vapor

Eliashevich, M.

Journal:

Physical Review (Series I)

Year:

1932

Language:

english

File:

PDF, 297 KB

english, 1932

18

Temperature dependence of threshold current density Jth and differential efficiency ηd of high-power InGaAsP/GaAs (λ=0.8 μm) lasers

Yi, H. J., Diaz, J., Eliashevich, I., Stanton, M., Erdtmann, M., He, X., Wang, L. J., Razeghi, M.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 292 KB

english, 1995

19

Optical evidence of an electrothermal degradation of InGaN-based light-emitting diodes during electrical stress

Pavesi, M., Manfredi, M., Salviati, G., Armani, N., Rossi, F., Meneghesso, G., Levada, S., Zanoni, E., Du, S., Eliashevich, I.

Journal:

Applied Physics Letters

Year:

2004

Language:

english

File:

PDF, 370 KB

english, 2004

20

Comparison of gain and threshold current density for InGaAsP/GaAs (λ=808 nm) lasers with different quantum well thickness

Yi, H. J., Diaz, J., Eliashevich, I., Lukas, G., Kim, S., Wu, D., Erdthmann, M., Jelen, C., Slivken, S., Wang, L. J., Razeghi, M.

Journal:

Journal of Applied Physics

Year:

1996

Language:

english

File:

PDF, 345 KB

english, 1996

21

Optimized structure for InGaAsP/GaAs 808 nm high power lasers

Yi, H. J., Diaz, J., Wang, L. J., Eliashevich, I., Kim, S., Williams, R., Erdtmann, M., He, X., Kolev, E., Razeghi, M.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 260 KB

english, 1995

22

High-power InGaAsP/GaAs 0.8-μm laser diodes and peculiarities of operational characteristics

Diaz, J., Eliashevich, I., He, X., Yi, H., Wang, L., Kolev, E., Garbuzov, D., Razeghi, M.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 452 KB

english, 1994

23

Reliability of aluminum-free 808 nm high-power laser diodes with uncoated mirrors

Eliashevich, I., Diaz, J., Yi, H., Wang, L., Razeghi, M.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 234 KB

english, 1995

24

SPIE Proceedings [SPIE Optoelectronics '99 - Integrated Optoelectronic Devices - San Jose, CA (Saturday 23 January 1999)] Light-Emitting Diodes: Research, Manufacturing, and Applications III - InGaN blue light-emitting diodes with optimized n-GaN layer

Eliashevich, Ivan, Li, Yuxin, Osinsky, Andrei, Tran, Chuong A., Brown, Michael G., Karlicek, Jr., Robert F., Schubert, E. F., Ferguson, Ian T., Yao, H. Walter

Year:

1999

Language:

english

File:

PDF, 2.17 MB

english, 1999

25

Le Grand Domaine dans la Russie du Moyen Age; Istoriia Prava Pozemelnoi Sobstvennosti v Rossii (History of the Laws of Property on Land in Russia); Feodalnoe Zemlevlacenie v Severo-Vostochnoi Rusi (Feudal Estates in North Eastern Russia);

Vernadsky, George, Eck, Alexandre, Eliashevich, V. B., Veselovsky, S. B.

Journal:

Year:

1948

Language:

english

File:

PDF, 464 KB

english, 1948

26

SPIE Proceedings [SPIE International Symposium on Optical Science and Technology - Seattle, WA (Sunday 7 July 2002)] Solid State Lighting II - Optimizing the external light extraction of nitride LEDs

Stefanov, Emil, Shelton, Bryan S., Venugopalan, Hari S., Zhang, Tingting, Eliashevich, Ivan, Ferguson, Ian T., Narendran, Nadarajah, DenBaars, Steven P., Park, Yoon-Soo

Year:

2002

Language:

english

File:

PDF, 578 KB

english, 2002

27

SPIE Proceedings [SPIE Photonics China '98 - Beijing, China (Wednesday 16 September 1998)] Semiconductor Lasers III - Investigation of 980-nm GaInAs/GaAs/GaInP QW high-power lasers

Wang, Lijun, Wu, Sheng Li, Liu, Yun, Ning, Yongqiang, Diaz, Jacqueline E., Eliashevich, Ivan, Yi, Hyuk J., Razeghi, Manijeh, Wang, Qiming, Davis, Lawrence J., Forouhar, Siamak

Year:

1998

Language:

english

File:

PDF, 144 KB

english, 1998

28

SPIE Proceedings [SPIE Photonics West '95 - San Jose, CA (Wednesday 1 February 1995)] Optoelectronic Integrated Circuit Materials, Physics, and Devices - Investigation of 0.8-μm InGaAsP-GaAs laser diodes with multiple quantum wells

Diaz, Jacqueline E., Yi, Hyuk J., Kim, Seongsin, Erdtmann, Matthew, Wang, Lewis S., Eliashevich, Ivan, Bigan, Erwan, Razeghi, Manijeh, Razeghi, Manijeh, Park, Yoon-Soo, Witt, Gerald L.

Year:

1995

Language:

english

File:

PDF, 501 KB

english, 1995

29

SPIE Proceedings [SPIE Optical Science and Technology, SPIE's 48th Annual Meeting - San Diego, CA (Sunday 3 August 2003)] Third International Conference on Solid State Lighting - Fabrication of high-lumen InGaN flip chip LEDs

Venugopalan, Hari S., Gao, Xiang, Zhang, Tingting, Shelton, Bryan S., DiCarlo, Anthony, Eliashevich, Ivan, Hsing, Michael, Ferguson, Ian T., Narendran, Nadarajah, DenBaars, Steven P., Carrano, John C.

Year:

2004

Language:

english

File:

PDF, 664 KB

english, 2004

30

SPIE Proceedings [SPIE Symposium on Integrated Optoelectronics - San Jose, CA (Thursday 20 January 2000)] Light-Emitting Diodes: Research, Manufacturing, and Applications IV - InGaAlP and InGaN light-emitting diodes: high-power performance and reliability

Eliashevich, Ivan, Debray, Jean-Philippe M., Tran, Chuong A., Venugopalan, Hari S., Karlicek, Jr., Robert F., Yao, H. Walter, Ferguson, Ian T., Schubert, E. F.

Year:

2000

Language:

english

File:

PDF, 1.35 MB

english, 2000

31

SPIE Proceedings [SPIE International Symposium on Optical Science and Technology - Seattle, WA (Sunday 7 July 2002)] Solid State Lighting II - Nitride LED chip separation technologies

Shelton, Bryan S., DiCarlo, Anthony, Stefanov, Emil, Eliashevich, Ivan, Ferguson, Ian T., Narendran, Nadarajah, DenBaars, Steven P., Park, Yoon-Soo

Year:

2002

File:

PDF, 1.13 MB

2002

32

SPIE Proceedings [SPIE Integrated Optoelectronics Devices - San Jose, CA (Saturday 25 January 2003)] Light-Emitting Diodes: Research, Manufacturing, and Applications VII - Ultraviolet nitride LED fabrication for high-flux white LED

Venugopalan, Hari S., DiCarlo, Anthony, Gao, Xiang, Libon, Sebastien, Shelton, Bryan S., Stefanov, Emil, Zhang, Tingting, Eliashevich, Ivan, Weaver, Stan E., Hsing, Michael, Kolodin, Boris, Soules, To

Year:

2003

Language:

english

File:

PDF, 830 KB

english, 2003

33

SPIE Proceedings [SPIE Optoelectronics '99 - Integrated Optoelectronic Devices - San Jose, CA (Saturday 23 January 1999)] Light-Emitting Diodes: Research, Manufacturing, and Applications III - Growth of InGaAlP HB-LEDs in a large-scale-production reactor

Li, Sherman, Collins, D. A., Vatanapradit, S., Ferreira, M., Zawadzki, Peter A., Stall, Richard A., Eliashevich, Ivan, Nering, J. E., Schubert, E. F., Ferguson, Ian T., Yao, H. Walter

Year:

1999

Language:

english

File:

PDF, 1.05 MB

english, 1999

34

SPIE Proceedings [SPIE Photonics China '96 - Beijing, China (Monday 4 November 1996)] Semiconductor Lasers II - Operating characteristics of Al-free InGaAsP/GaAs single quantum well high-power laser

Wang, Lijun, Wu, Sheng Li, Diaz, Jacqueline E., Eliashevich, Ivan, Yi, Hyuk J., Razeghi, Manijeh, Forouhar, Siamak, Wang, Qiming

Year:

1996

Language:

english

File:

PDF, 196 KB

english, 1996

35

SPIE Proceedings [SPIE Optoelectronics '99 - Integrated Optoelectronic Devices - San Jose, CA (Saturday 23 January 1999)] Light-Emitting Diodes: Research, Manufacturing, and Applications III - Growth and characterization of high-efficiency InGaN MQW blue and green LEDs from large-scale-production MOCVD reactors

Tran, Chuong A., Karlicek, Jr., Robert F., Brown, Michael G., Eliashevich, Ivan, Gurary, Alexander, Stall, Richard A., Schubert, E. F., Ferguson, Ian T., Yao, H. Walter

Year:

1999

Language:

english

File:

PDF, 1.68 MB

english, 1999

36

The circulating level of modified LDL and C3-convertase activation among patients at low cardiovascular risk

Eliashevich, Sofia, Drapkina, Oxana, Shoibonov, Batogab

Journal:

Atherosclerosis

Year:

2017

Language:

english

File:

PDF, 49 KB

english, 2017

37

A new method to determine the modified LDL atherogenicity among patients at low cardiovascular risk

Eliashevich, Sofia, Drapkina, Oxana, Shoibonov, Batogab

Journal:

Atherosclerosis

Year:

2017

Language:

english

File:

PDF, 50 KB

english, 2017

38

The MASP activity and the thrombosis risk in low cardiovascular risk patients

Eliashevich, Sofia, Drapkina, Oxana, Shoibonov, Batogab

Journal:

Atherosclerosis

Year:

2017

Language:

english

File:

PDF, 417 KB

english, 2017

39

The eating behavior patterns among people with cardiovascular disease

Eliashevich, Sofia, Dubolazova, Julia, Drapkina, Oxana

Journal:

Atherosclerosis

Year:

2017

Language:

english

File:

PDF, 50 KB

english, 2017

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